| PART |
Description |
Maker |
| MCR718 MCR718T4 MCR716T4 MCR716 |
Silicon Controlled Rectifier (Reverse Blocking Thyristors)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
|
ONSEMI[ON Semiconductor]
|
| BRY55-200 BRY55 BRY55-100 BRY55-30 BRY55-400 BRY55 |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS 可控.8安培RMS000
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS 0.8 A, 60 V, SCR, TO-226AA
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| C106 C106M C106A C106B C106D C106F |
SCRs 4 AMPERES RMS 50 thru 600 VOLTS
|
http://
MOTOROLA[Motorola, Inc]
Motorola Inc
|
| MCR8DSN MCR8DSM ON1832 |
SCRs 8.0 AMPERES RMS 600 thru 800 VOLTS
From old datasheet system
|
ON Semi
|
| B2RG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 100;
|
MICROSEMI POWER PRODUCTS GROUP
|
| P0102BA1AA3 P0102BA-1AA3 P0102AA1AA3 P0102AA5AL3 P |
Sensitive standard SCRs up to 0.8 A
|
STMicroelectronics
|
| 1PT08E-06 1PT08E-03 1PT08E-08 1PT08E-05 1PT06E-03 |
Sensitive gate SCRs, 1A
|
Nell Semiconductor Co., Ltd
|
| P0109DA-1AA3 P0109DA-5AL3 |
Sensitive gate SCRs
|
ST Microelectronics
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
