| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SD992-Z |
Low VCE(sat). Collector-base voltage VCBO 30 V
|
TY Semiconductor Co., Ltd
|
| 2SB1407S |
Low frequency power amplifier. Collector to base voltage VCBO -35 V
|
TY Semiconductor Co., Ltd
|
| 2SD1366A |
Low frequency power amplifier Collector-base voltage VCBO 30 V
|
TY Semiconductor Co., Ltd
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2SC3120 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V
|
TY Semiconductor Co., Ltd
|
| 2SC4081 |
Low Cob. Cob=2.0pF (Typ.) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| BCV72 |
Low current (max. 100 mA). Low voltage (max. 60 V). Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
