| PART |
Description |
Maker |
| PE7036-2 |
0 to 82.5 dB Toggle Step Attenuator, BNC Female To BNC Female With 0.5 dB Step Rated To 1 Watt Up To 1 GHz
|
Pasternack Enterprises, Inc.
|
| MASY-008215-243000 |
Synthesiser, SMT, 3.15 - 5.55 GHz, 2.5 MHz step.
|
MACOM[Tyco Electronics]
|
| AT-267 AT-267SMB AT-267TR AT-267TR-3 |
Digital Attenuator 1 Bit 15 dB Step DC - 2.0 GHz
|
MACOM[Tyco Electronics]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| EK4314-01 |
UltraCMOS RF Digital Step Attenuator, 1 MHz?.5 GHz
|
Peregrine Semiconductor
|
| PE43713 |
UltraCMOS RF Digital Step Attenuator, 9 kHz-6 GHz
|
Peregrine Semiconductor
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 5082-0810 50820810 |
SILICON STEP RECOVERY DIODE S BAND, SILICON, STEP RECOVERY DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 10F40S3 |
FAST RECOVER DIODE
|
JILIN SINO-MICROELECTRO...
|
