| PART |
Description |
Maker |
| APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| RM12F0.0118OHMCT-LF RM12F0.0113OHMCT-LF RM12F0.011 |
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0102 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0121 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
|
Cal-Chip Electronics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STP11NB40 |
10.7 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
| IRF360 |
25 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
HARRIS SEMICONDUCTOR
|
| 2N6786TX |
1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
HARRIS SEMICONDUCTOR
|
| IRFR310 |
1.7 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
VISHAY INTERTECHNOLOGY INC
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| RFP8P08 RFP8P10 RFM8P10 RFM8P08 |
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
|
HARRIS[Harris Corporation]
|
|
