PART |
Description |
Maker |
AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
DSW1064-A |
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
|
Motorola
|
MHW1915D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived
|
Motorola
|
PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc] MOTOROLA
|