| PART |
Description |
Maker |
| MMBT5400 MMBT5401 |
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflahenmontage
|
Diotec Semiconductor
|
| QD406S |
Planar structure with EPI wafer
|
Pan Jit International I...
|
| MMBT2222 MMBT222207 MMBT2222A |
Surface Mount Si-Epi-Planar Switching Transistors
|
Diotec Semiconductor
|
| MMBT5551 MMBT5550 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BCW61A BCW61C BCW61B BCW61D |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BC846W07 BC849W BC848W BC847W |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| MMBT4403 MMBT4401 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BC81707 BC817 BC818 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| 7206FRPFS-50 7206F 7206FRPFB-15 7206FRPFB-20 7206F |
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
|
MAXWELL[Maxwell Technologies]
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
