| PART |
Description |
Maker |
| MII300-12A4 MDI300-12A4 MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 330 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
http://
|
| SEMIX101GD126HDS08 |
Trench IGBT Modules 130 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SKIM220GD176D |
IGBT Modules 220 A, 1700 V, N-CHANNEL IGBT
|
Semikron International
|
