PART |
Description |
Maker |
STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Low input capacitance and gate charge
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STMicroelectronics
|
CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
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Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
IXSQ10N60B2D1 IXSH10N60B2D1 |
20 A, 600 V, N-CHANNEL IGBT TO-3P, 3 PIN 20 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS CORP
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc. POWEREX[Powerex Power Semiconductors]
|
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
STGB10NC60HDT4 STGB10NC60HD08 STGF10NC60HD STGD10N |
600 V - 10 A - very fast IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
STMicroelectronics
|
STFI26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in I2PAKFP package N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package
|
ST Microelectronics STMicroelectronics
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