| PART |
Description |
Maker |
| HM628127HB |
1 M High Speed SRAM (128-kword ?8-bit)(1 M 楂??SRAM (128k瀛??8浣?)
|
Hitachi,Ltd.
|
| HM629127HB HM629127HBJP-15 HM629127HBJP-20 HM62912 |
1 M HIGH SPEED SRAM(128-KWORD X 9-BIT)
|
Hitachi Semiconductor
|
| HM629127HBLJP-15 HM629127HBLJP-20 HM629127HBJP-15 |
1 M HIGH SPEED SRAM(128-KWORD X 9-BIT) 1米高速SRAM128 - KWord的9位）
|
Hitachi,Ltd.
|
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM62W16255HC HM62W16255HCJP-10 HM62W16255HCLJP-10 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM62W16255H HM62W16255HJP-12 HM62W16255HJP-15 HM62 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM628128DI |
1 M SRAM (128-kword ×8-bit)(1M静态RAM (128k×8)
|
Hitachi,Ltd.
|
| R1RW0416DGE-0PI R1RW0416DSB-0PI R1RW0416DI10 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| M21L216128A M21L216128A-10J M21L216128A-10T M21L21 |
128 K x 16 SRAM HIGH SPEED CMOS SRAM
|
List of Unclassifed Manufacturers
ETC
|
| M21L216128A-15J M21L216128A-10T |
128 K x 16 SRAM HIGH SPEED CMOS SRAM
|
Electronic Theatre Controls, Inc.
|
| AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
