| PART |
Description |
Maker |
| FMMT449 |
Low equivalent on-resistance.
|
TY Semiconductor Co., Ltd
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STFI11N65M2 STF11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| HCU60R350T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| GFC240 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| STB28N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
| PMK30EP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| AP2127 |
EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD
|
| PMZ250UN |
N-channel TrenchMOS extremely low level FET
|
NXP Semiconductors N.V.
|
