PART |
Description |
Maker |
IRFB23N15D IRFSL23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A) 150V,23A,SMPS MOSFET for High frequency DC-DC converters(150V,23A,开关电MOS场效应管,用于高DC-DC变换 50V3A条,开关电源的MOSFET的高频率DC - DC转换器(50V3A条,开关电源马鞍山场效应管,用于高频的DC - DC变换器)
|
International Rectifier, Corp.
|
IRFP9140N |
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V Rds(on)=0.117ohm Id=-23A) HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
RJK1053DPB-15 RJK1053DPB-13 |
100V, 25A, 13m?max Silicon N Channel Power MOS FET Power Switching 100V, 25A, 13m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching 100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK1051DPB-00-J5 RJK1051DPB-15 |
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching 100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
STF40NF06 |
N-CHANNEL 60A - 0.024 Ohm - 23A - TO-220 STRIPFET II MOSFET N-CHANNEL 60V - 0.024ohm - 23A - TO-220FP STripFET II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
IRF[International Rectifier]
|
IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
0923150417 |
Picoflex PF-50 IDT-to-IDT, 4 Circuits, 0.17m (6.69") Length
|
Molex Electronics Ltd.
|