| PART |
Description |
Maker |
| 1N6775 1N6777 |
15Amp, 50-200V ultra-fast rectifier
100V, 15A, Ultra-Fast Power Rectifiers 2 Pin Package(100V, 15A,超快恢复电源整流器（2脚封
|
Omnirel
|
| STP14NF10 STP14NF10FP STB14NF10 |
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET
N-CHANNEL 100V 0.115 OHM 15A D2PAK/TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET?/a> II POWER MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFETII POWER MOSFET N沟道100V 0.115欧姆-5A TO-220/TO-220FP/D2PAK低栅极电荷STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| S15D40 S15D60 S15D30 S15D50 |
SCHOTTKY BARRIER RECTIFIERS(15A,70-100V)
|
MOSPEC[Mospec Semiconductor]
|
| SHD116244 SHD116244B |
A 100V, 15A, POWER SCHOTTKY RECTIFIER IN HERMETIC SHD-1/1B PACKAGE.
|
Sensitron
|
| BDT91 |
Trans GP BJT NPN 100V 15A 3-Pin(3 Tab) TO-220
|
New Jersey Semiconductor
|
| RJK1028DSP-00-J5 |
100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRF7476PBF |
HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mΩ@VGS = 4.5V , ID = 15A )
HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mヘ@VGS = 4.5V , ID = 15A )
|
International Rectifier
|
| CM100BU-12H |
Four IGBTMOD 100 Amperes/600 Volts
Toggle Switch; Circuitry:DPST; Switch Operation:On-Off-On; Contact Current Max:15A; Actuator Style:Flat Lever; Switch Terminals:Solder Lug; Current Rating:15A; Leaded Process Compatible:Yes; Mounting Type:Panel RoHS Compliant: Yes
|
Powerex Power Semicondu...
Powerex Power Semiconductors
|
| IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
