| PART |
Description |
Maker |
| NX6353EP27-AZ |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
California Eastern Labs
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| FSF9250R FSF9250D FSF9250R1 FN4090 FSF9250R4 FSF92 |
From old datasheet system
15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| BSP87E-6327 |
290 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET SMD, 3 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| VIM-310 |
VIM-310
|
Varitronix international limited
|
| VPP16-310 |
VPP16-310
|
TRIAD MAGNETICS
|
| OTS-1SDT2DAT-A1-FC-IC OTS-1SDT2DAT-A1-LC-IC OTS-1S |
Optiva Standard, 1 SDI 270 Mbps Optiva垄芒 Standard, 1 SDI 270 Mbps
Optiva Standard, 1 SDI 270 Mbps Optiva Standard, 1 SDI 270 Mbps
Optiva Standard, 1 SDI 270 Mbps Optiva?/a> Standard, 1 SDI 270 Mbps
|
Opticomm Corporation
|
| PAK-VI |
310 Ivy Glen Court
|
ETC[ETC]
|
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| STV270N4F3 |
N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET Power MOSFET
N-channel 40 V, 1.25 mヘ, 270 A, PowerSO-10 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
