| PART |
Description |
Maker |
| NX5311GH NX5311GK NX5311 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5504_06 NX5504 NX5504EH-AZ NX5504EK-AZ NX550406 |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX5522 NX5522EH NX5522EK |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5501 NX5501EH-AZ NX5501EK-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
California Eastern Laboratories
|
| ZVN4525G ZVN4525GTA ZVN4525GTC |
PNP 30CM DIFF W/ADJ RoHS Compliant: Yes 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-CHANNEL ENHANCEMENT MODE MOSFET 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel MOSFET
|
Zetex Semiconductor PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| NX5310 NX5310EH-AZ NX5310EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
California Eastern Laboratories
|
| NX5310EK-AZ NX5310EH-AZ NX5310 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
CEL[California Eastern Labs]
|
| PAS5351 PAS5361 |
Gigabit Ethernet PON Burst Receiver
|
PMC-Sierra
|
| DS1865T_TR DS1865 DS1865T_ |
PON Triplexer Control and Monitoring Circuit
|
MAXIM[Maxim Integrated Products]
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| DS1863E DS1863ER DS1863ET DS1863 DS26522 DS26522G |
Dual T1/E1/J1 Transceiver
Burst-Mode PON Controller With Integrated Monitoring
|
MAXIM[Maxim Integrated Products]
|
