| PART |
Description |
Maker |
| IXGH36N60A3D4 |
GenX3 600V IGBT with Diode
|
IXYS Corporation
|
| IXGH48N60B3D1 |
GenX3 600V IGBT with Diode
|
IXYS Corporation
|
| IXGX64N60B3D1 IXGK64N60B3D1 |
GenX3 600V IGBT with Diode
|
IXYS Corporation
|
| IXGH56N60B3D1 |
GenX3 600V IGBT
|
IXYS Corporation
|
| IXGT64N60B3 IXGH64N60B3 |
GenX3 600V IGBT
|
IXYS Corporation
|
| SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
|
Infineon Technologies AG
|
| IXGT60N60C3D1 IXGH60N60C3D1 |
GenX3 600V IGBTs with Diode
|
IXYS Corporation
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| HGTG30N60B3D |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体 60 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
|
| FGH40N6S2D FGH40N6S2DNL |
75 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
