| PART |
Description |
Maker |
| 27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM
256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8）低电压的CMOS存储
256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| 62C256 IS62C256-7 IS62C256-4 IS62C256-70T IS62C256 |
32K x 8 Low Power CMOS Static RAM(32K x 8 浣????MOS???RAM)
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
ETC[ETC]
Integrated Silicon Solution Inc
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| BS62LV256S BS62LV256TC BS62LV256SC BS62LV256TI BS6 |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| 27LV256 11024E |
256K (32K x 8) Low-Voltage CMOS EPROM
From old datasheet system
|
Microchip
|
| IS62LV256- IS62LV256-70TI IS62LV256-70T IS62LV256 |
32K x 8 LOW VOLTAGE STATIC RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| CAT25C32 25C64 CAT25C64U14-1.8TE13 CAT25C64U14-TE1 |
32K/64K-BitSPISerialCMOSE2PROM
32K/64K-Bit SPI Serial CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
CATALYST[Catalyst Semiconductor]
|
| CY7C4275V CY7C4275V-10ASC CY7C4285V-15ASI CY7C4285 |
3.3V operation for low power consumption and easy integration into low-voltage systems
32K/64Kx18 Low Voltage Deep Sync FIFOs
|
Cypress Semiconductor
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
32K X 8 OTPROM, 55 ns, PDIP28
HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
