| PART |
Description |
Maker |
| CHF5225CNF500L |
60 W Power RF Flanged Chip Termination
|
Bourns Electronic Solut...
|
| CHF3523CNT500LX CHF3523CNT500LY CHF3523CNT500LZ CH |
150 W Power RF Chip Termination
|
BOURNS[Bourns Electronic Solutions]
|
| 19127-0086 19095-0138 19127-0044 19127-0090 19127- |
CONN FLANGED SPADE #8 10-12AWG 6 mm2, BRASS, WIRE TERMINAL
BB-886-08 Flanged Spade Avikrimp 2 mm2, BRASS, WIRE TERMINAL
FLANGED SPADE AVIKRIMP TAPED (BB-816-08T 2 mm2, BRASS, WIRE TERMINAL
191270090 6 mm2, BRASS, WIRE TERMINAL
CONN FLANGED SPADE #6 14-16AWG 2 mm2, BRASS, WIRE TERMINAL
FLANGED SPADE VERSAKRIMP (BB-316-08) 2 mm2, BRASS, WIRE TERMINAL
|
Molex, Inc.
KEMET Corporation
|
| TFR200 TFR100 TFR050 TFR010 |
RF FLANGED POWER RESISTORS
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| MJE15030 MJE15031 MJE15029 MJE15028 ON2012 |
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| S8JX-G10012 S8JX-G10012D S8JX-G05005 S8JX-G05005D |
Switch Mode Power Supply
Wide Variety of Output Voltage Variations: 48 V for 15 to 150 W, and 5 or 12 V for 150 W
|
Omron Electronics LLC
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| RFP-20-100RP-S RFP-20-50RP |
Flanged Resistors 20 Watts, 50Ω
Flanged Resistors 20 Watts, 50ヘ
|
Anaren Microwave
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| MBR30H150CTG MBRF30H150CTG |
SWITCHMODE Power Rectifier 150 V, 30 A
SWITCHMODE垄芒 Power Rectifier 150 V, 30 A
|
ON Semiconductor
|
