| PART |
Description |
Maker |
| UL1970N UL1970 |
Ukad sterujcy punktowym wskanikiem zoonym z diod wieccych
OBUDOWA CE 71
|
Ultra CEMI
ETC
|
| IRG4BC20SD-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| FDFS2P102 FAIRCHILDSEMICONDUCTORCORP-FDFS2P102 FDF |
Integrated P-Channel MOSFET and Schottky Diode
FETKEY P-Channel MOSFET with Schottky Diode 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STK30NHS3LL |
N-channel 30 V - 0.0028 Ω - 30 A - PolarPAK? STripFET Power MOSFET plus monolithic Schottky
N-channel 30 V - 0.0028 ヘ - 30 A - PolarPAK㈢ STripFET⑩ Power MOSFET plus monolithic Schottky
|
STMicroelectronics
|
| IRF7322D1 |
MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )
FETKY? MOSFET / Schottky Diode
|
International Rectifier
|
| STS4DNFS30L 8566 STS4DNFS30 |
N-CHANNEL 30V - 0.044 OHM - 4A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIER
N-CHANNEL 30V - 0.044 OHM - 4A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIER
N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER
From old datasheet system
N-CHANNEL POWER MOSFET
N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET?/a> II MOSFET PLUS SCHOTTKY RECTIFIER
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| NTHD4N02F NTHD4N02FT1G NTHD4N02FT1 NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
|
ON Semiconductor
|
| DMS3014SSS-13 DMS3014SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
10.4 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| DMS3015SSS-13 DMS3015SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
11 A, 30 V, 0.0119 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| AM29DL800BT70RWBC AM29DL800BB70RSI AM29DL800BT70RS |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU9343-701 with Lead-Free packaging
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7404 with Lead Free Packaging x8/x16闪存EEPROM
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR5410 with Standard Packaging x8/x16闪存EEPROM
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7807D2 with Standard Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7807VD1 with Lead Free Packaging
|
Advanced Micro Devices, Inc.
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| WPM2005 WPM2005-8TR |
Power MOSFET and Schottky Diode
|
TY Semiconductor Co., Ltd
|
