| PART |
Description |
Maker |
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX25L3206EZUI-12G MX25L3206EM2 |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L3206EMI12G MX25L3206EZNI12G MX25L3206EM2I12G |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
DATASHEET
|
Macronix International
|
| MX25L3205MC-20 MX25L3205 MX25L3205MC-20G MX25L3205 |
32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
| KM23C32000C |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| MX25L3273EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
