| PART |
Description |
Maker |
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| IXYN82N120C3H1 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| IXYH50N120C3D1 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GA400TD60U |
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
|
IRF[International Rectifier]
|
| IRGS8B60K IRGSL8B60K IRGB8B60K |
INSULATED GATE BIPOLAR TRANSISTOR
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
|
http://
IRF[International Rectifier]
|
| IXGH10N100A IXGH10N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGH30N60 IXGM30N60A IXGH30N60A IXGM30N60 |
LOW VCE(SAT) IGBT, HIGH SPEED IGBT
|
IXYS[IXYS Corporation]
|
| IXGM17N100 IXGH17N100 IXGH17N100A IXGM17N100A |
3.5V diode
Low V IGBT High speed IGBT
|
IXYS Corporation
|
