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HY51VS65163HG - 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power

HY51VS65163HG_7590358.PDF Datasheet

 
Part No. HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
Description 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power

File Size 97.47K  /  11 Page  

Maker


Hynix Semiconductor



Homepage http://www.hynix.com/eng/
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 Full text search : 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power


 Related Part Number
PART Description Maker
HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5 4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
Hitachi,Ltd.
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
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Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
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Integrated Silicon Solution, Inc.
Alliance Semiconductor
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
Samsung Electronic
SAMSUNG[Samsung semiconductor]
HM5165405F HM5164405F 64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
Hitachi,Ltd.
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS 5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
K4E151611D-JL50 K4E151612D-TL50 1M X 16 EDO DRAM, 50 ns, PDSO42
1M X 16 EDO DRAM, 50 ns, PDSO44

HYB3116165BSJ-70 HYB3116165BST-70 HYB3118165BSJ-70 1M X 16 EDO DRAM, 70 ns, PDSO42
1M X 16 EDO DRAM, 70 ns, PDSO44
SIEMENS AG
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2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
 
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