| PART |
Description |
Maker |
| PBP2718 PBP2727 PBP5427 PBP5436 PBPA5436 PB362718 |
Panneau interieur - Serie PB
|
Hammond Manufacturing Ltd.
Hammond Manufacturing L...
|
| IPCBP76 |
Panneau interieur de base
|
Hammond Manufacturing Ltd.
|
| DTS3081A115N4SS |
Climatiseur exterieur de 2500 BTUH
|
Hammond Manufacturing L...
|
| LTFD1200-01 |
Telecom Disconnect Switch LTFD 1200 Series - 900 to 1200 Amp
|
LITTELFUSE[Littelfuse]
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| APT15GN120BDQ1 APT15GN120BDQ1G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT26F120L APT26F120B2 APT26F120B209 |
Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
|
Microsemi, Corp.
Microsemi Corporation
|
