PART |
Description |
Maker |
BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V,N通道SOT3封装的功率MOSFET) TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
KAD5610P-25Q72 KAD5610P-12Q72 KAD5610P-17Q72 KAD56 |
Dual 10-Bit, 250/210/170/125MSPS A/D Converter
|
List of Unclassifed Manufacturers
|
KAD5610P KAD5610P-12 KAD5610P-12Q72 KAD5610P-17 KA |
Dual 10-Bit, 250/210/170/125MSPS A/D Converter
|
Renesas Electronics Corporation
|
KAD5612P09 |
Dual 12-Bit, 250/210/170/125MSPS A/D Converter
|
Intersil Corporation
|
VN1706LP016 |
220 mA, 170 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SUPERTEX INC
|
AD9250 |
14-Bit, 170 MSPS/250 MSPS, JESD204B, Dual Analog-to-Digital Converter
|
Analog Devices
|
M74HC352B1R M74HC353M1R M54HC352 M54HC352B1R M54HC |
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT(INV.) HC352: DUAL 4 CHANNEL MULTIPLEXER(INV.) HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATEOUTPUTINV. HC352: DUAL 4 CHANNEL MULTIPLEXERINV. 12-Bit, 2.5 us Dual DAC, Serial Input, Programmable Settling Time, M temperature 8-CDIP -55 to 125 VDSL Codec 80-LQFP -40 to 85 12-Bit, Single Channel DAC, Parallel, Voltage Out, Low Power, Asynchronous Update 20-SOIC 0 to 70
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET RF Power Field Effect Transistor
|
Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
|