| PART |
Description |
Maker |
| EL5105 EL5304 EL5104 EL5204 EL5205 |
Triple, 700MHz, Slew Enhanced Voltage Feedback Amplifier with Enable
Single, 700MHz High Speed Voltage Feedback Amplifier with Enable
Dual, 700MHz Slew Enhanced Voltage Feedback Amplifier with Enable
|
Intersil
|
| 2075SERIES 2075-2000 2075-1000 2075-300 2075-3000 |
Delay 5000 /-100 ns, fixed high B.W. line Tr
Delay 500 /-20 ns, fixed high B.W. line Tr
Delay 4000 /-80 ns, fixed high B.W. line Tr
Delay 3000 /-60 ns, fixed high B.W. line Tr
Delay 300 /-20 ns, fixed high B.W. line Tr
Delay 1000 /-20 ns, fixed high B.W. line Tr
Delay 2000 /-40 ns, fixed high B.W. line Tr
FIXED HIGH B.W. DELAY LINE TR 1ns
|
Data Delay Devices Inc
|
| EL5205IY-T13 EL5205 EL5104 EL5304 EL5205IS EL5205I |
700MHz Slew Enhanced VFA
700MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO10
700MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
700MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO16
Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:22-55
|
Intersil, Corp.
音频／视频放
INTERSIL[Intersil Corporation]
http://
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| D2053UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-28V-1GHz,推拉)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| D10040200GTH |
GaAs Power Doubler, 40 - 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
