| PART |
Description |
Maker |
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 19023-0012 19025-0004 19022-0010 19022-0006 19023- |
.250X.032 MALE QD INSULKRIMP (MCT-2X) 2 mm2, TAB TERMINAL
190250004 0.8 mm2, TAB TERMINAL
.250 X .032 MALE QD KRIMP/TAPE (AMCT-1T) 0.8 mm2, TAB TERMINAL
.187 X .020 MALE QD KRIMPTITE (AMCT-17) 0.8 mm2, TAB TERMINAL
.187X.020 MALE QD INSULKRIMP (MCT-27X) 2 mm2, TAB TERMINAL
.250X.032 MALE QD AVIK. TAPED (CMCT-5T) 5 mm2, TAB TERMINAL
.187X.020 MALE QD KRIMP.TAPED (MCT-17T) 2 mm2, TAB TERMINAL
.250X.032 MALE QD AVIKRIMP (MCT-5)
|
Molex, Inc.
MOLEX INC
|
| STL35NF3LL |
N-CHANNEL 30V 0.0055 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| S8C5H30L STS8C5H30L STS8C5H30L_07 STS8C5H30L07 |
N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
|
IRF[International Rectifier]
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| IRGPC50KD2 IRGPC50KD2-EPBF |
52 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
600V Copack IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| STS9NF3LL 8315 |
N-CHANNEL 30V - 0.016 ohm - 9A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.016 OHM - 9A SO-8 LOW GATE CHARGE STRIPFET II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
