| PART |
Description |
Maker |
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| MX25L6475EM2I10G MX25L6475EZNI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K3N7C4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life
SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX2 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
http://
|
| MX28F640C3BTTC-12 MX28F640C3BBTI-12 MX28F640C3BBTC |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| UPD29F064115F9-CD5 UPD29F064115GZ-MJH UPD29F064115 |
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE
|
NEC[NEC]
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位（8Mx8 / 4Mx16）的CMOS掩膜ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
