| PART |
Description |
Maker |
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| MCP1700 |
The MCP1700 is a CMOS low dropout positive voltage regulator which can source up to 250mA of current with an extremely low input-output ...
|
Microchip
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| FCL10A015 |
Extremely Low Forward Voltage drop Diode
|
NIEC[Nihon Inter Electronics Corporation]
|
| GFC264 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| PMK30EP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| PMN50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
