| PART |
Description |
Maker |
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| KTA1663 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., Ltd
|
| KTC4075 |
Collector Power Dissipation: PC=100mW
|
TY Semiconductor Co., Ltd
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| MRA0412 MRA0104 MRA0309 |
Power dissipation up to 2W
RoHS Compliant
Power dissipation up to 2W
|
Ohmite Mfg. Co.
|
| FMKA130 FMKA130NL |
1.0 Schottky Power Rectifier
1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV
1.2 Watt Power Dissipation Package 1.0 Ampere/ Forward Voltage Less than 600mV
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| UPD75217GF UPD75217CW |
POWER DISSIPATION
|
List of Unclassifed Manufacturers
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