| PART |
Description |
Maker |
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| MG15J6ES40 |
INSULATED GATE BIPOLAR TRANSISTOR
|
Toshiba Semiconductor
|
| IRG4PSC71K-15 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| MGP15N60U |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
| IRG4PC30KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
