PART |
Description |
Maker |
FG600AL28 POWEREXINC-FG1000AH44 GT300AV70 GT300AL2 |
1400 V, GATE TURN-OFF SCR 3500 V, GATE TURN-OFF SCR 1200 V, GATE TURN-OFF SCR 3600 V, GATE TURN-OFF SCR 2300 V, GATE TURN-OFF SCR 2500 V, GATE TURN-OFF SCR
|
POWEREX INC
|
DG306AE25 |
Gate Turn-off Thyristor 353.25 A, 2500 V, GATE TURN-OFF SCR
|
Dynex Semiconductor, Ltd.
|
APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
GCU08AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
FGC1500A-130DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
GCU35AB-120 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
GCU40AB-90 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
TYM-200-10 TYM-500-10 TYM-100K-10 TYM-100-10 TYM-2 |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 2000000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 1000000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 50000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 5000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10 ohm
|
Vishay Intertechnology, Inc.
|
5SHY35L4512 |
Asymmetric Integrated Gate- Commutated Thyristor 3300 A, 4500 V, ASSYMETRIC SCR
|
ABB, Ltd.
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
CM100TU-24F |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
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