PART |
Description |
Maker |
2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
ZTX649 ZTX649-15 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR TRANSISTOR|BJT|NPN|25VV(BR)CEO|2AI(C)|TO-92
TRANSISTORBIPOLAR
|
Zetex Semiconductors Diodes Incorporated
|
ZXTN2010ASTZ |
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 4500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Zetex Semiconductor PLC
|
FMMT491 FMMT491TA |
Medium power NPN transistor in SOT23 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Diodes Incorporated Diodes, Inc.
|
2N1483 2N1484 2N1485 2N1486 JANTX2N1485 JANTX2N148 |
NPN SILICON MEDIUM POWER TRANSISTOR NPN硅中功率晶体 NPN SILICON MEDIUM POWER TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-8 NPN Transistor
|
Microsemi, Corp. Microsemi Corporation
|
2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
2SD1664-X-AB3-R 2SD1664G-X-AB3-R 2SD1664L-X-AB3-R |
MEDIUM POWER NPN TRANSISTOR 1000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
UNISONIC TECHNOLOGIES CO LTD
|
2N2369ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管(高可靠性、陶瓷表贴封装)) DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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