| PART |
Description |
Maker |
| 15-38-1026 A-7859-2A164 7859-2A164N 0015381026 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
|
Molex Electronics Ltd.
|
| AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD |
160 dB Logarithmic Amplifier with Photo-Diode Interface
160 dB Range (100 pA -10 mA) Logarithmic Converter
|
AD[Analog Devices]
|
| 0014625021 014-60-4034 014-60-3039 014-60-4020 014 |
ASSEMBLY, CONNECTOR BOX I.D. SINGLE ROW/ .100 GRID GROUPED HOUSINGS
ASSEMBLY, CONNECTOR BOX I.D. SINGLE ROW / . 100 GRID GROUPED HOUSINGS
|
Molex Electronics Ltd.
|
| 014-60-3027 014-60-4022 014-60-4023 014-60-4025 01 |
ASSEMBLY, CONNECTOR BOX I.D SINGLE ROW - .100 GRID GROUPED HOUSINGS
|
Molex Electronics Ltd.
|
| DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| E1341-01 A7992 A5074 A4184-02 A4184-03 E1168 E1168 |
Housings, Power and Signal Cables, Connector Adapters
Housings, Power and Signal Cables, Connector Adapters 外壳，电源和信号电缆，连接器适配
PREMIUM RS232 DATA CBL DB25 FEMALE - DB25 FEMALE
FLUORESCENT UTILITY LIGHT25 FT
Housings/ Power and Signal Cables/ Connector Adapters
Housings Power and Signal Cables Connector Adapters
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
| TC74AC273P07 TC74AC273P TC74AC273F |
CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Flip Flop with Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
|
Toshiba Semiconductor
Toshiba, Corp.
|
| DF3A6.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S5.6S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.3F |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| TLSU12507 TLSU125F TLSU126 TLSU126F TLSU125 |
Panel Circuit Indicator
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.92; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Semiconductor
Toshiba Corporation
|
