PART |
Description |
Maker |
MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流,高密度,电源连接 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流,高密度,电源连接 High Current, High Density, Power Connectors 高电流,高密度,电源连接 High Current / High Density / Power Connectors
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HIROSE ELECTRIC Co., Ltd. Hirose Electric USA, INC. HIROSE[Hirose Electric]
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ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD 2.5V In-System Programmable SuperFAST?/a> High Density PLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
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Central Semiconductor C...
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SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
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Semtech Corporation
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压7500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压5000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
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Semtech Corporation
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SMA5J30 SMA5J30A SMA5J33 SMA5J33A SMA5J36 SMA5J36A |
High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB庐 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB㈢ Transient Voltage Suppressors
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Vishay Siliconix
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ISPLSI2032A-110LT48I ISPLSI2032A-135LJI ISPLSI2032 |
In-System Programmable High Density PLD EE PLD, 8 ns, PQFP44 In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件 In-System Programmable High Density PLD EE PLD, 10 ns, PQCC44 In-System Programmable High Density PLD EE PLD, 10 ns, PQFP48 In-System Programmable High Density PLD EE PLD, 7.5 ns, PQFP44
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Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ATV2500B-15KM/883 ATV2500BL-20KM/883 ATV2500BQL-30 |
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP40 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 15 ns, CQCC44 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CQCC44 High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PQCC44 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CDIP40 High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP40 ER 4C 4#8 SKT RECP BOX Seals Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:14; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Female RoHS Compliant: No Circular Connector; No. of Contacts:14; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:22-19 RoHS Compliant: No ER 14C 14#16 SKT RECP CONTROL KNOB RoHS Compliant: Yes ER 3C 3#8 SKT RECP BOX ER 7C 7#16 PIN RECP ER 3C 1#16 2#8 PIN RECP BOX ER 9C 9#16 PIN RECP
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Atmel, Corp. Atmel Corp. http:// ATMEL Corporation
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ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
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LATTICE[Lattice Semiconductor] LATTICE [Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ATV750 ATV750-20DM ATV750-20DM_883 ATV750-20GM ATV |
THERMISTOR GLASS 250 OHM DO-35 UV PLD, 25 ns, CDIP24 THERMISTOR GLASS 1K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 10K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 30K OHM DO-35 UV PLD, 25 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDSO24 High Density UV Erasable Programmable Logic Device UV PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP24
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84 High-Density Programmable Logic
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Lattice Semiconductor, Corp. LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation
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