| PART |
Description |
Maker |
| 1N2131AR 1N2129A 1N2128AR 1N2129AR 1N2130A 1N2130A |
DEVICE HIGH POWER STANDARD
|
America Semiconductor, LLC
America Semiconductor, ...
|
| 1N3208 1N3210 1N3208R 1N3209 1N3210R |
DEVICE HIGH POWER STANDARD
|
America Semiconductor, LLC
America Semiconductor, ...
|
| WSL06035L000DBA18 WSL06035L000DEA18 WSL06035L000DE |
Power Metal Strip? Resistors, High Power (2 x Standard WSL), Low Value (down to 0.001 Ω), Surface Mount
Power Metal Strip庐 Resistors, High Power (2 x Standard WSL), Low Value (down to 0.001 惟), Surface Mount
Power Metal Strip垄莽 Resistors, High Power (2 x Standard WSL), Low Value (down to 0.001 楼?), Surface Mount
Power Metal Strip㈢ Resistors, High Power (2 x Standard WSL), Low Value (down to 0.001 ヘ), Surface Mount
|
http://
Vishay Siliconix
|
| MC9S12DT256C MC9S12DT256B MC9S12DG256C 9S12DP256BD |
9S12Dx256B Device Guide. also covers C derivatives and 9S12Ax256 devices
device made up of standard HCS12 blocks and the HCS12 processor core 设备组成水平的HCS12块和HCS12的处理器核心
|
ETC
飞思卡尔半导体(中国)有限公司
|
| SBH52414G SBH51414G SBH52414N SBH52414Z SBH51414N |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
AC Series Door Switch, Single Pole Double Throw Circuitry, 10 A at 250 Vac, Rod Actuator, Silver Contacts, Screw Termination
|
http://
INFINEON[Infineon Technologies AG]
|
| HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation
Toshiba, Corp.
|
| TPD4113AK |
INTELLIGENT POWER DEVICE HIGH VOLTAGE MONOLITHIC SILICON POWER IC
|
Toshiba Semiconductor
|
| D9853 |
High Power RF Device
|
Werlatone
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| SCNAR05 SCNAR1 SCNAR2 SCNAR4 SCNAR6 SCNAR8 SCDAR8 |
High Current, Standard Recovery Doubler Rectifier(反向电压800V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压100V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压50V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压400V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压600V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压200V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
STANDARD RECOVERY DOUBLER AND CENTER TAPS
|
Semtech Corporation
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
