| PART |
Description |
Maker |
| GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS |
Low-Noise Operational Amplifier 8-SOIC -40 to 85
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
|
Electronic Theatre Controls, Inc.
|
| AD8663ACPZ-R2 AD8663ACPZ-RL |
16V, 180A Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180レA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
|
| AD8663ACPZ-R7 AD8663 AD8663ACPZ-R2 AD8663ACPZ-RL A |
16V, 180μA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180レA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180A Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
|
Analog Devices
AD
|
| TA75S558FTE85LF |
Single Low-Noise Operational Amplifier
|
Toshiba Semiconductor
|
| TL07108 TL071BCD_BCDT TL071ID_IDT TL071ACD_ACDT TL |
Low noise JFET single operational amplifier
|
STMicroelectronics
|
| ISL28227FRTBZ ISL28227FRTZ ISL28227FUBZ ISL28227FU |
Precision Single and Dual Low Noise Operational Amplifiers
|
Intersil Corporation
|
| OP-270A OP-270AJ8 OP-270E OP-270EJ8 OP-270G OP-270 |
From old datasheet system
Dual/Quad Low Noise / Precision Operational Amplifiers
Dual/Quad Low Noise, Precision Operational Amplifiers DUAL OP-AMP, 75 uV OFFSET-MAX, 6 MHz BAND WIDTH, CDIP8
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 400 uV OFFSET-MAX, 6 MHz BAND WIDTH, CDIP14
Dual/Quad Low Noise, Precision Operational Amplifiers DUAL OP-AMP, 250 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDIP8
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 1000 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDIP14
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 1000 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDSO16
Dual/Quad Low Noise, Precision Operational Amplifiers 四低噪声，高精度运算放大
|
LINER[Linear Technology]
Linear Technology Corporation
Linear Technology, Corp.
|
| KIA75S558F |
BIPOLAR LINEAR INTEGRATED CIRCUIT (SINGLE LOW NOISE OPERATIONAL AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| M29W010 M29W010B M29W010B45K1T M29W010B45K6T M29W0 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
|
ST Microelectronics
STMicroelectronics
意法半导
|
| 29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125
Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC
High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125
; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8，统一座低电压单电源闪
CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，统一座低电压单电源闪
CAP RF 27PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 24PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 22PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
High Speed High Drive Precision Dual Operational Amplifier 8-SOIC
CAP RF 1.0PF 250V 0603 SMD
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70
Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
512K X 8 FLASH 3V PROM, 150 ns, PQCC32
512K X 8 FLASH 3V PROM, 200 ns, PDSO32
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
意法半导
STMicroelectronics N.V.
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
