| PART |
Description |
Maker |
| 2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| D1021UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| BFM35 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
SEMELAB LTD
|
| PMBF5484 PMBF5486 PMBF5485 |
2G,FS/FD CVR,GSKT& SCRS,ALUM,DX UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
N-channel field-effect transistors
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PN4416-TO-72 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72
|
MICROSS COMPONENTS
|
| RDL2-433-32 RDL2 |
UHF Multi Channel Wide Band FM Transceiver
|
Radiometrix Ltd
|
| C966 |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
MOTOROLA INC
|
| J308LTR-E3 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
|
