| PART |
Description |
Maker |
| FCP13N60N FCPF13N60NT |
N-Channel SupreMOSMOSFET 600V, 13A, 258m
|
Fairchild Semiconductor
|
| FCA22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
| FCPF22N60NT |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
| FCA76N60N |
N-Channel SupreMOSMOSFET 600V, 76A, 36m
|
Fairchild Semiconductor
|
| FCPF7N60NT |
N-Channel SupreMOS? MOSFET 600 V, 6.8 A, 520 mΩ
N-Channel SupreMOSMOSFET 600V, 6.8A, 520m
|
Fairchild Semiconductor
|
| FCP25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 125m
N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
|
Fairchild Semiconductor
Diodes Incorporated
|
| FCD9N60NTM |
N-Channel SupreMOSMOSFET 600V, 9A, 385m
N-Channel MOSFET
|
Fairchild Semiconductor
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m
600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| HGTG30N60B3D |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体 60 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
|
|
