| PART |
Description |
Maker |
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G LBSS139WT3G |
Power MOSFET 200 mAmps, 50 Volts N?Channel SC?0
|
Leshan Radio Company
|
| 2N7000G11 |
Small Signal MOSFET 200 mAmps, 60 Volts N.Channel TO.92
|
ON Semiconductor
|
| MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT�
|
ON Semiconductor
|
| BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号，逻辑电平，N-沟道增强型MOS场效应管（TO-92封装
|
ONSEMI[ON Semiconductor]
|
| LMGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts
|
LRC[Leshan Radio Company]
|
| MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G MGSF1N03L MGS |
Power MOSFET 750 mAmps, 30 Volts
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
From old datasheet system
|
ON Semiconductor
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| 2N7002LT3 2N7002LT1 L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts
Small Signal MOSFET 115 mAmps/ 60 Volts
Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特
|
http://
LRC[Leshan Radio Company]
Leshan Radio Company, Ltd.
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
