| PART |
Description |
Maker |
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| IRFD110PBF |
1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY INTERTECHNOLOGY INC
|
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| AD8253ARMZ-R71 AD8253ARMZ-RL1 AD8253ARMZ1 AD82241 |
10 MHz, 20 V/μs, G = 1, 10, 100, 1000 i CMOS? Programmable Gain Instrumentation Amplifier
10 MHz, 20 V/渭s, G = 1, 10, 100, 1000 i CMOS庐 Programmable Gain Instrumentation Amplifier
10 MHz, 20 V/楼矛s, G = 1, 10, 100, 1000 i CMOS垄莽 Programmable Gain Instrumentation Amplifier
10 MHz, 20 V/レs, G = 1, 10, 100, 1000 i CMOS㈢ Programmable Gain Instrumentation Amplifier
|
Analog Devices
|
| CMR1U-0110 CMR1U-10 CMR1U-02 CMR1U-06 CMR1U-04 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS
1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| CBR1-D100 CBR1-D010 CBR1-D020 CBR1-D040 CBR1-D060 |
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
From old datasheet system
Leaded Bridge Rectifier General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| 0833-2X4R-54 0833-2X4R-33 0833-2X6R-33 0833-2X6R-5 |
8port.No LEDs.RJ45 10/100/1000 Gigabit Ethernet
12port.No LEDs.RJ45 10/100/1000 Gigabit Ethernet 12port.No LEDs.RJ45 10/100/1000千兆以太
16port.No LEDs.RJ45 10/100/1000 Gigabit Ethernet 16port.No LEDs.RJ45 10/100/1000千兆以太
|
Amphenol, Corp.
Bel Fuse, Inc.
|
| BCM53115 |
Five 10/100/1000 PHYs
|
Broadcom Corporation.
|
| SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
http://
|
| FFM101 FFM102 FM107 FFM107 FFM104 FFM106 FFM105 FF |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
|
Rectron Semiconductor
RECTRON LTD
|
| BCM5700 |
PCI - X 10/100/1000 BASE -T CONTROLLER
|
Broadcom Corporation.
|
|
