| PART |
Description |
Maker |
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| GT40RR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT20J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| AOTS40B65H1 |
IGBT Discrete IGBTs
|
Alpha & Omega Semiconductor
|
| SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
| IXBT42N170A IXBH42N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH9N140G IXBH9N160G |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH40N160 IXBH40N140 |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
|
IXYS Corporation
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SH21 |
IGBTs
Silicon N-Channel IGBT
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
