| PART |
Description |
Maker |
| GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| 63009-2 |
FASTON Uninsulated Receptacles & Housings; 250 FLG FAS RCPT 18-14 016TPBR ( AMP )
|
Tyco Electronics
|
| HD66132T |
240-Channel HI-FAS Segment Driver for Dot-Matrix Graphic LCD Display(用于点阵图形LCD240通道段码驱动 240通道您好Fas抗原段驱动的点阵图形液晶显示屏（用于点阵图形液晶显示240通道段码驱动器）
|
Hitachi,Ltd.
|
| 2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
| 2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51 |
General Purpose Transistors - SOT89; VCEO=60V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=45V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=45V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160
PNP SILICON AF TRANSISTORS
|
INFINEON[Infineon Technologies AG]
|
| 1763FS LT1763-2.5 LT1763-1.5 LT1763-1.8 LT1763-3.3 |
500mA, Low Noise, LDO Micropower Regulators(2.5V杈??锛?000mA,浣??澹帮?浣??宸?ǔ???)
500mA, Low Noise, LDO Micropower Regulators(1.5V杈??锛?000mA,浣??澹帮?浣??宸?ǔ???)
500mA, Low Noise, LDO Micropower Regulators(3V杈??锛?000mA,浣??澹帮?浣??宸?ǔ???)
500mA, Low Noise, LDO Micropower Regulators(2.5V输出000mA,低噪声，低压差稳压器) 500mA的，低噪声，LDO的微功耗稳压器2.5V的输出，五零零零毫安，低噪声，低压差稳压器）
500mA, Low Noise, LDO Micropower Regulators(3V输出000mA,低噪声，低压差稳压器)
500mA, Low Noise, LDO Micropower Regulators(3.3V输出000mA,低噪声，低压差稳压器)
500mA, Low Noise, LDO Micropower Regulators(1.8V输出000mA,低噪声，低压差稳压器)
500mA, Low Noise, LDO Micropower Regulators(1.5V输出5000mA,低噪声，低压差稳压器)
From old datasheet system
|
Linear Technology, Corp.
Linear Technology Corporation
|
| 2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
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