| PART |
Description |
Maker |
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 |
From old datasheet system
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管（高电流增益低集电极发射极饱和电压
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BCX69-10 BCX69-16 |
For general AF applications. High collector current. High current gain.
|
TY Semiconductor Co., Ltd
|
| BCV61C BCV61A |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| 2SC4705 |
High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| BSS79B BSS79C BSS81B BSS81 BSS81C Q62702-S605 BSS7 |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HC05 MC68HC705X32 |
Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W
HCMOS microcontroller unit
|
Motorola, Inc.
|
| 2SD2318 |
High DC current gain. Low saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
