| PART |
Description |
Maker |
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| K4B1G1646C-ZCG9 K4B1G0846C-ZCG9 K4B1G0446C-ZCG9 |
1Gb C-die DDR3 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4B1G1646C-ZCF7 K4B1G0846C-ZCF7 K4B1G0446C-ZCF7 K4 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| IS46TR16640ED-125KBLA2 IS46TR16640ED-125KBLA3 IS46 |
128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
|
Integrated Silicon Solu...
|
| EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs
1G bits DDR3 SDRAM
1G bits DDR3 SDRAM
|
Elpida Memory
|
| EBE10RD4ABFA |
1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) 1GB的注册DDR2 SDRAM DIMM内存28M的字× 72位，1个等级）
|
Elpida Memory, Inc.
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| H5TQ1G63AFP H5TQ1G83AFP H5TQ1G43AFP H5TQ1G43AFPR-G |
1Gb DDR3 SDRAM
256M X 4 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
128M X 8 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
|
Hynix Semiconductor, Inc.
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| HMT41GR7AFR8C |
DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TC1G83EFRPBA H5TC1G83EFRPBI H5TC1G63EFRPBA H5TC1 |
1Gb DDR3L SDRAM
|
Hynix Semiconductor
|
| HY5PS1G431F HY5PS1G431F-C4 HY5PS1G431F-C5 HY5PS1G4 |
1Gb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
