| PART |
Description |
Maker |
| GS8160Z18CGT-250I GS8160Z18CGT-333 GS8160Z18CT GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z18BB-200 GS8162Z18BB GS8162Z18BB-150 GS8162 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z18T-250 GS8160Z18T-250I GS8160Z18T-225 GS81 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC
|
| GS8160Z18 GS8160Z36T GS8160Z36T-133 GS8160Z36T-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC
|
| GS8160Z18CT-333I GS8160Z18CGT-333I GS8160Z36CT-333 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 4.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 4.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| IDT70V9359L9PFI IDT70V9349 IDT70V9349L IDT70V9349L |
8K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
4K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
8K X 18 DUAL-PORT SRAM, 15 ns, PQFP100
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDTIDT71P71604167BQ IDTIDT71P71604200BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SRAM Burst of 2
|
Integrated Device Technology
|
| IDTIDT71P79104167BQ IDTIDT71P79104167BQI IDTIDT71P |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2
|
Integrated Device Technology
|
| IDTIDT71P79204167BQ IDTIDT71P79204250BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 35.7流水线⑩二二氧化硅的DDR SRAM的爆
|
Integrated Device Technology, Inc.
|
