PART |
Description |
Maker |
APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
IXGH15N120B2D1 IXGT15N120B2D1 |
HiPerFAST IGBT 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA
|
IXYS Corporation
|
APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT 5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
BSM15GP120DL BSM150GAL120DL |
15 A, 1200 V, N-CHANNEL IGBT ECONOPIM 150 A, 1200 V, N-CHANNEL IGBT
|
|
CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
CM50DY-24H |
Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|