| PART |
Description |
Maker |
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| SOT-143 |
A : MIN 0.900 MAX 1.150 A1 : MIN 0.000 MAX 0.100
|
Analog Microelectronics
|
| MSOP-8 |
A1 : MIN 0.000 MAX 0.150 A2 : MIN 0.750 MAX 0.950
|
Analog Microelectronics
|
| SOP-8PP |
A : MIN 1.350 MAX 1.750 A1 : MIN 0 MAX 0.150
|
Analog Microelectronics
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 5ET1 5ET2.5 5ET1.25 5ET1.6 5ET3.15 |
µP Supervisory Circuits with Windowed (Min/Max) Watchdog and Manual Reset
1ppm/°C, Low-Noise, 2.5V/ 4.096V/ 5V Voltage References
µP Supervisory Circuits with Windowed (Min/Max) Watchdog and Manual Reset 保险
|
Honeywell International, Inc.
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
