| PART |
Description |
Maker |
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| M58LW064 M58LW064BZA M58LW064A M58LW064A150NF1T M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW064 M58LW064A M58LW064A150NF1T M58LW064A150NF |
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
ST Microelectronics
SGS Thomson Microelectronics
|
| MB84VD23381HJ-70PBS MB84VD23381HJ MB84VD23381HJ-70 |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
| M58LW128B150N6T M58LW128B150N1T M58LW128A150N6E M5 |
8M X 16 FLASH 3V PROM, 150 ns, PDSO56
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位Mb x16Mb的X32号，统一座，突发3V电源闪存
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位8Mb x16Mb的X32号，统一座，突发3V电源闪存
RECEPTACLE HOUSING, 5WAY
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| W987D6CKJX5G W947D6CKJX5G W989D6CKJX5G W949D6CKJX5 |
512Mb Mobile LPSDR
512Mb Mobile LPSDR
|
Winbond
|
| M58LV064A150ZA1T M58LV064A150ZA6T M58LV064B150N1T |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories 64兆位4Mb的x16或功能的2Mb X32号，统一座，突发3V电源闪存
|
STMicroelectronics N.V.
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
