PART |
Description |
Maker |
PHT41435B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AT-41535 AT-41535G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
AA028N1-99 |
230 GHz Low Noise Amplifier GT 14C 10#12 4#16 SKT PLUG 23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
|
BAT15-099 BAT1599 Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier GT 14C 14#16 SKT PLUG 1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
INA-30311 INA-30311-TR1 |
1 GHz Low Noise Silicon MMIC Amplifier 1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器 GT 8C 2#0 6#12 PIN PLUG 280 GHz GaAs MMIC Low Noise Amplifier 28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc. Alpha Industries Inc ALPHA[Alpha Industries] http://
|