| PART |
Description |
Maker |
| RM20CA-XXS RM20C1A-XXS RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QVS212CG0R6BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG100JDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CGR75CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R9CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| CPH6003A12 |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
| CPH6003A |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC5945 2SC5945TR-E |
Si NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE677M04-T2-A |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 中功率NPN硅高频晶体管
|
California Eastern Laboratories, Inc.
|
| RQG2001URAQF RQG2001UR-TL-E |
NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| CPH6002 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications
|
Sanyo Semicon Device
|
