| PART |
Description |
Maker |
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| EC3H01B |
VHF Band Low-Noise Amplifer and OSC Applications 甚高频波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor VHF Band Low-Noise Amplifer and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| BF660 Q62702-F982 |
From old datasheet system
PNP Silicon RF Transistor (For VHF oscillator applications) VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MA2C346 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| DA6X103T |
SILICON, VHF BAND, MIXER DIODE
|
PANASONIC CORP
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 1N5712-AR1 |
SILICON, VHF-UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| BB809-TAPE-REEL |
VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| 1SV216TPH4 1SV216TPHR4 |
VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
| BB515E6433 |
VHF-UHF BAND, 18.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS A G
|
